Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
نویسندگان
چکیده
منابع مشابه
Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)
The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible microRaman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer re...
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The future of integrated circuits will include the integration of high performance III-V electronic and/or opto-electronic devices with standard Si CMOS to create to a new class of highly integrated, high performance, ‘intelligent’, mixed signal and RF circuits. While traditional hybrid approaches, such as wire bonded or flip chip multi-chip assemblies may provide short term solutions, the vari...
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Deep traps in AlGaN/GaN high electron mobility transistors on silicon substrate were characterized by the means of current-voltage and Deep Level Transient Spectroscopy (DLTS). DLTS measurements have revealed only hole-trap with an activation energy of 0.82eV. The nature and the localization of this trap are discussed here.
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We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10(7) to 10(9) cm(-2). The islands show a standard deviation of base size distribution below 10% and their shape evolves chan...
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2016
ISSN: 1882-0778,1882-0786
DOI: 10.7567/apex.9.086501